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  ZXTP722MA document number ds31885 rev. 5 - 2 1 of 7 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTP722MA 70v pnp low satura tion transistor features and benefits ? bv ceo > -70v ? i c = -2.5a continuous collector current ? low saturation voltage (-220mv max @ -1a) ? r sat = 117 m? for a low equivalent on-resistance ? h fe specified up to -3a for high current gain hold up ? low profile 0.6mm high package for thin applications ? r ja efficient, 60% lower than sot23 ? 4mm 2 footprint, 50% smaller than sot23 ? lead-free, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn2020b-3 ? case material: molded plasti c. ?green? molding compound. ? terminals: pre-plated nipdau leadframe. ? nominal package height: 0.6mm ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? weight: 0.01 grams (approximate) applications ? mosfet gate driving ? dc-dc converters ? charging circuits ? power switches ? motor control ordering information product marking reel size (inches) tape width (mm) quantity per reel ZXTP722MAta s4 7 8 3000 notes: 1. no purposefully added lead. 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com marking information to p view dfn2020b-3 device symbol bottom view pin-out bottom view c e b s4 = product type marking code to p view s4
ZXTP722MA document number ds31885 rev. 5 - 2 2 of 7 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTP722MA maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -70 v collector-emitter voltage v ceo -70 emitter-base voltage v ebo -7 peak pulse current i cm -3 a continuous collector current (note 3) i c -2.5 (note 4) -2.7 base current i b -1 thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (note 3) p d 1.5 12 w mw/ c (note 4) 2.45 19.6 thermal resistance, junction to ambient (note 3) r ja 83 c/w (note 4) 51 thermal resistance, junction to lead (note 5) r jl 16.8 operating and storage temperature range t j, t stg -55 to +150 c notes: 3. for a device surfac e mounted on 31mm x 31mm (10cm 2 ) fr4 pcb with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. the entire exposed collector pad is attached to the heatsink. 4. same as note (3), except the device is measured at t 5 sec. 5. for a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTP722MA document number ds31885 rev. 5 - 2 3 of 7 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTP722MA thermal characteristics 0.1 1 10 100 0.01 0.1 1 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100us 100ms 1s v ce(sat) limited 1ms safe operating area single pulse, t amb =25c dc 10ms -i c collector current (a) -v ce collector-emitter voltage (v) derating curve 10 sqcm single 1oz cu t amb =25c max power dissipation (w) temperature (c) 10 sqcm single 1oz cu t amb =25c d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) thermal resistance v board area 1oz copper 2oz copper thermal resistance (c/w) board cu area (sqcm) 1oz copper 2oz copper power dissipation v board area t amb =25c t j max =150c continuous p d dissipation (w) board cu area (sqcm)
ZXTP722MA document number ds31885 rev. 5 - 2 4 of 7 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTP722MA electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -70 -150 - v i c = -100a collector-emitter breakdown voltage (note 6) bv ceo -70 -125 - v i c = -10ma emitter-base breakdown voltage bv ebo -7 -8.5 - v i e = -100a collector cutoff current i cbo - - -100 na v cb = -55v emitter cutoff current i ebo - - -100 ?na v eb = -6v collector emitter cutoff current i ces - - -100 na v ces = -55v static forward current transfer ratio (note 6) h fe 300 300 175 40 - 470 450 275 60 10 - - - - - - i c = -10ma, v ce = -5v i c = -100ma, v ce = -5v i c = -1a, v ce = -5v i c = -1.5a, v ce = -5v i c = -3a, v ce = -5v collector-emitter saturation voltage (note 6) v ce(sat) - - - - -35 -135 -140 -175 -50 -200 -220 -270 mv i c = -0.1a, i b = -10ma i c = -0.5a, i b = -20ma i c = -1a, i b = -100ma i c = -1.5a, i b = -200ma base-emitter turn-on voltage (note 6) v be ( on ) - -0.78 -1.00 v i c = -1.5a, v ce = -5v base-emitter saturation voltage (note 6) v be ( sat ) - -0.94 -1.05 v i c = -1.5a, i b = -200ma output capacitance c obo - 14 20 pf v cb = -10v. f = 1mhz transition frequency f t 150 180 - mhz v ce = -10v, i c = -50ma, f = 100mhz turn-on time t on - 40 - ns v cc = -50v, i c = -1a i b1 = i b2 = -50ma turn-off time t off - 700 - ns notes: 6. measured under pulsed conditions. pulse width 300 s. duty cycle 2%.
ZXTP722MA document number ds31885 rev. 5 - 2 5 of 7 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTP722MA typical electrical characteristics 1m 10m 100m 1 10 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 0.4 1m 10m 100m 1 0 100 200 300 400 500 600 700 800 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 i c /i b =5 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =5v -55c 25c 100c - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =5v 100c 25c -55c - v be(on) (v) - i c collector current (a) typical gain (h fe )
ZXTP722MA document number ds31885 rev. 5 - 2 6 of 7 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTP722MA package outline dimensions suggested pad layout dfn2020b-3 dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.02 a3 ? ? 0.152 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d2 1.22 1.42 1.32 d4 0.56 0.76 0.66 e ? ? 0.65 e 1.95 2.075 2.00 e2 0.79 0.99 0.89 e4 0.48 0.68 0.58 l 0.25 0.35 0.30 z ? ? 0.225 all dimensions in mm dimensions value (in mm) c 1.30 g 0.24 x 0.35 x1 1.52 y 1.09 y1 0.47 y2 0.50 seating plane e e2 d d2 l a3 a a1 b d4 e4 z e e x y1 y y2 x1 c g
ZXTP722MA document number ds31885 rev. 5 - 2 7 of 7 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTP722MA important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com


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